Panatron, Inc. GaN-Based Power Amplifiers for TWT Amplifier Replacement – Gallium Nitride (GaN) Power Amplifiers utilize pulsed solid state power amplifier technology and include designs that operate with output power levels up to 1,000 watts and frequencies to 26 GHz. These power amplifiers serve as cost-effective replacements for traveling wave tube (TWT) amplifier and offer longer life. better efficiencies and reduces size and weight than their TWT counterparts.
GaN Solid State Pulsed Power Amplifiers – Products output power up to 2 kw and suited for wide band operation. These amplifiers utilize state of the art thermal simulation and scanning tools as well as multiple design technologies resulting in reduced size, excellent thermal performance, and improved reliability. Utilizing state of the art GaN transistor technology. We or able to overcome limitations in TWT with solid state pulsed power amplifiers. These solid state designs overcome the inherent problems with electron tube TWTs of limited life and single point failure susceptibility while addressing the competing high performance airborne system requirements of kilowatt power levels and compact size.
Silicon MOSFET, LDMOS and GaAs, – We our high performance power amplifier solutions are designed with strict attention to efficiency and reliability. Products include broadband, high linearity designs, as well as high frequency, narrow band, higher power amplifier to 2K watts with emphasis on size and packaging. Our engineers are experts in multiple discipline integration, including power amplifier designs with integrated switches, filters and splitters.